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The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cellsIt is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.
Document ID
19840014959
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Godlewski, M. P. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1984
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.15:83667
NASA-TM-83667
E-2110
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: Kissimmee, FL
Country: United States
Start Date: May 1, 1984
End Date: May 4, 1984
Accession Number
84N23027
Funding Number(s)
PROJECT: RTOP 506-55-42
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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