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Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 filmsBy varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.
Document ID
19900011894
Acquisition Source
Legacy CDMS
Document Type
Technical Publication (TP)
Authors
Steinmann, Pierre A. (NASA Lewis Research Center Cleveland, OH, United States)
Spalvins, Talivaldis (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
April 1, 1990
Subject Category
Engineering (General)
Report/Patent Number
NAS 1.60:2994
NASA-TP-2994
E-5181
Report Number: NAS 1.60:2994
Report Number: NASA-TP-2994
Report Number: E-5181
Accession Number
90N21210
Funding Number(s)
PROJECT: RTOP 506-43-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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