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Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFETDirect current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 nW/sq cm optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photo detector, and mixer are demonstrated.
Document ID
19870008560
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Simons, Rainee N. (NASA Lewis Research Center Cleveland, OH, United States)
Bhasin, Kul. B. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1987
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:88980
NASA-TM-88980
E-3333
Accession Number
87N17993
Funding Number(s)
PROJECT: RTOP 506-44-21
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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