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A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable OscillatorA Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.
Document ID
19980174905
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Romanofsky, Robert R. (NASA Lewis Research Center Cleveland, OH United States)
Miranda, Felix A. (NASA Lewis Research Center Cleveland, OH United States)
VanKeuls, Fred W. (National Academy of Sciences - National Research Council Cleveland, OH United States)
Date Acquired
September 6, 2013
Publication Date
April 1, 1998
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-11113
NASA/TM-1998-206967
NAS 1.15:206967
Meeting Information
Meeting: European Workshop: Low Temperature Electronics
Location: Tuscany
Country: Italy
Start Date: June 24, 1998
End Date: June 26, 1998
Sponsors: Milan Univ., Electron Devices Society
Funding Number(s)
PROJECT: RTOP 632-50-5D
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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