NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
SiC-Based Gas Sensor DevelopmentSilicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.
Document ID
20000021223
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Hunter, G. W. (NASA Glenn Research Center Cleveland, OH United States)
Neudeck, P. G. (NASA Glenn Research Center Cleveland, OH United States)
Gray, M. (NASA Glenn Research Center Cleveland, OH United States)
Androjna, D. (Cortez 3 Service Corp. Cleveland, OH United States)
Chen, L.-Y. (AYT Corp. Brook Park, OH United States)
Hoffman, R. W., Jr. (Ohio Aerospace Inst. Brook Park, OH United States)
Liu, C. C. (Case Western Reserve Univ. Cleveland, OH United States)
Wu, Q. H. (Case Western Reserve Univ. Cleveland, OH United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2000
Subject Category
Instrumentation And Photography
Report/Patent Number
E-12009
NAS 1.15:209653
NASA/TM-2000-209653
Report Number: E-12009
Report Number: NAS 1.15:209653
Report Number: NASA/TM-2000-209653
Meeting Information
Meeting: Silicon Carbide and Related Materials
Location: Raleigh, NC
Country: United States
Start Date: October 10, 1999
End Date: October 15, 1999
Sponsors: North Carolina State Univ.
Funding Number(s)
PROJECT: RTOP 242-82-62
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available