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30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service applicationSixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.
Document ID
19840008395
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Saunier, P. (Texas Instruments, Inc. Dallas, TX, United States)
Nelson, S. (Texas Instruments, Inc. Dallas, TX, United States)
Date Acquired
September 4, 2013
Publication Date
October 1, 1983
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
TI-08-83-42
NASA-CR-168276
NAS 1.26:168276
Report Number: TI-08-83-42
Report Number: NASA-CR-168276
Report Number: NAS 1.26:168276
Accession Number
84N16463
Funding Number(s)
CONTRACT_GRANT: NAS3-22504
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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